Remote MWDS RIE
replaced by ICP

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  • typical process pressure: 100 - 1.000 mtorr
  • no ion bombardment at the substrates
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    Typical Applications:

    • low damage photoresist stripping
    • low damage isotropic SiN etching
    • surface cleaning
    MWDS - RIE schematic/ 8 kB

    "Microwave Downstream" with 2.45 GHz plasma

    MWDS: manual tuning (three stubs)

    "remote plasma"
    no direct contact between the plasma and the substrate

    see also: comparison ICP - ECR

    MWDS has been replaced by ICP - RIE !

    • lower (substrate) electrode grounded, RF driving opt.
    • substrate electrode heated
    • automatic height adjustment of the electrode opt.
    • parameter: gas flows, pressure, source power, temperature
    • plasma burns in the source only