Remote ICP-RIE
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  • typical process pressure: 100 - 1.000 mtorr
  • no ion bombardment at the substrates

    • Remote ICP-RIE layout

    Typical Applications:

    • low damage photoresist stripping
    • low damage isotropic SiN etching
    • surface cleaning
    ICP - RIE scetch/ 6 kB

    "Inductive Coupled Plasma" with 13.56 MHz excitation

    ICP is fully automatic (RF automatch unit)

    "remote plasma"
    no direct contact between the plasma and the substrate

    older remote RIE technology: MWDS

    • lower (substrate) electrode grounded, RF driving opt.
    • substrate electrode heated
    • automatic height adjustment of the electrode opt.
    • parameter: gas flows, pressure, source power, temperature
    • plasma burns in the source only